View TN2410L_3186026.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

TN2410L, vn2406d/e, vn2410l/ls vishay siliconix document number: 70204 s-58620erev. e, 21-jun-99 www.siliconix.com faxback 408-970-5600 1 n-channel enhancement-mode mosfet transistors
part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) TN2410L 240 10 @ v gs = 4.5 v 0.5 to 1.8 0.18 vn2406d 240 6 @ v gs = 10 v 0.8 to 2 1.12 vn2406l 240 6 @ v gs = 10 v 0.8 to 2 0.18 vn2410l 10 @ v gs = 10 v 0.8 to 2 0.18 vn2410ls 10 @ v gs = 10 v 0.8 to 2 0.19 low on-resistance: 3.5 secondary breakdown free: 260 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature arun-awayo high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control 1 to-220ab (tab drain) top view g s d 2 3 to-226aa (to-92) top view s d g 1 2 3 to-92s (tab drain) top view s d g 1 2 3 TN2410L vn2406l vn2410l vn2406d vn2410ls
parameter symbol TN2410L vn2406d b vn2406l vn2410l vn2410ls unit drain-source voltage v ds 240 240 240 240 240 v gate-source voltage v gs 20 20 20 20 20 v continuous drain current (t 150 c) t a = 25 c i d 0.18 1.12 0.18 0.18 0.19 a (t j = 150 c) t a = 100 c i d 0.11 0.7 0.11 0.11 0.12 a pulsed drain current a i dm 1 3 1.7 1.7 2 power dissipation t a = 25 c p d 0.8 20 0.8 0.8 0.9 w power dissipation t a = 100 c p d 0.32 8 0.32 0.32 0.4 w maximum junction-to-ambient r thja 156 6.25 c 156 156 139 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. c. maximum junction-to-case
TN2410L, vn2406d/e, vn2410l/ls vishay siliconix www.siliconix.com faxback 408-970-5600 2 document number: 70204 s-58620erev. e, 21-jun-99

limits TN2410L vn2406d/l vn2410l/ls parameter symbol test conditions typ a min max min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 100 a 260 240 240 240 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 1.4 0.5 1.8 0.8 2 0.8 2 v gbdlk i v ds = 0 v, v gs = 15 v 100 100 a gate-body leakage i gss t j = 125 c 500 500 na v ds = 0 v, v gs = 20 v 10 zgvl dic i v ds = 192 v, v gs = 0 v 0.01 1 a zero gate voltage drain current i dss t j = 125 c 1 100 a zero gate v oltage drain current i dss v ds = 120 v, v gs = 0 v 10 10 a t j = 125 c 500 500 on - state drain current b i d(on) v ds = 10 v, v gs = 4.5 v 0.8 0.25 a on - state drain current b i d(on) v ds = 15 v, v gs = 10 v 1.5 1 1 a dis or i b v gs = 2.5 v, i d = 0.1 a 7.5 10 10 dis or i b v gs = 3.5 v, i d = 0.05 a 4.5 15 drain - source on - resistance b r ds(on) v gs = 4.5 v, i d = 0.2 a 4 10 drain - source on - resistance b r ds(on) t j = 125 c 7.5 20 v gs = 10 v, i d = 0.5 a 3.5 6 10 t j = 125 c 6.5 14.8 24.7 forward transconductance b g fs v ds = 10 v, i d = 0.2 a 500 100 ms forward t ransconductance b g fs v ds = 10 v, i d = 0.5 a 530 300 300 ms input capacitance c iss v25vv0v 115 135 135 135 f output capacitance c oss v ds = 25 v, v gs = 0 v f = 1 mhz 30 50 50 50 pf reverse transfer capacitance c rss f 1 mhz 5 20 20 20 switching c toti t on v 60 v r 150 5 35 turn-on time t d(on) v 60 v r 150 3 8 8 t r v dd = 60 v, r l = 150 i d 0.4 a, v gen = 10 v 2 8 8 ns toffti t off i d 0 . 4 a , v gen = 10 v r g = 25 26 60 ns turn-off time t d(off) 20 23 23 t f 6 24 34 notes a. for design aid only, not subject to production testing. vndb24 b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature.
TN2410L, vn2406d/e, vn2410l/ls vishay siliconix document number: 70204 s-58620erev. e, 21-jun-99 www.siliconix.com faxback 408-970-5600 3

ohmic region characteristics output characteristics for low gate drive drain current (ma) i d drain current (a) i d v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) 1.0 0123 45 0.8 0.6 0.4 0.2 0 v gs = 10 v 4.0 v 3.5 v 3.0 v 2.5 v 2.0 v 200 0 0.4 0.8 1.2 1.6 2.0 160 120 80 40 0 v gs = 3 v 2.6 v 2.4 v 2.2 v 2.0 v 1.8 v on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (a) i d on-resistance ( r ds(on) i d drain current (a) t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) 0.5 0.4 0.3 0 01 5 0.2 0.1 234 125 c 25 c t j = 55 c 6 5 4 0 0 0.1 0.6 3 1 0.2 0.3 0.4 0.5 2 048121620 12 10 8 0 6 4 2 i d = 0.1 a 0.5 a 1.0 a t j = 55 c 2.25 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 0.1 a v gs = 10 v i d = 0.5 a v gs = 10 v v ds = 15 v r ds(on) drain-source on-resistance ( ) )
TN2410L, vn2406d/e, vn2410l/ls vishay siliconix www.siliconix.com faxback 408-970-5600 4 document number: 70204 s-58620erev. e, 21-jun-99

threshold region capacitance v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) drain current (ma) i d c capacitance (pf) 10 1 0.01 0.3 0.1 0.7 1.1 1.5 25 c 55 c t j = 150 c 400 300 0 010 50 200 100 20 30 40 v gs = 0 v f = 1 mhz v ds = 5 v c iss c oss c rss 100 10 1 1 100 210 52050 v dd = 60 v r l = 150 i d = 0.4 a 0.01 0.1 1 100 10 1 v ds = 60 v r g = 25 gate charge load condition effects on switching i d drain current (a) q g total gate charge (pc) gate-to-source voltage (v) v gs t switching time (ns) t d(off) t d(on) t r t f t switching time (ns) drive resistance effects on switching source-drain diode forward voltage t d(off) t d(on) t r t f 15.0 12.5 10.0 0 0 400 2000 7.5 5.0 800 1200 1600 2.5 192 v 0 0.5 2.5 1 0.1 0.01 1.0 1.5 2.0 t j = 25 c t j = 150 c source current (a) i s v sd source-drain voltage (v) r g gate resistance ( ) i d = 0.5 a v ds = 120 v
TN2410L, vn2406d/e, vn2410l/ls vishay siliconix document number: 70204 s-58620erev. e, 21-jun-99 www.siliconix.com faxback 408-970-5600 5

10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k normalized effective transient thermal impedance, junction-to-ambient (to-226aa) normalized effective transient thermal impedance t 1 square wave pulse duration (sec) 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2

▲Up To Search▲

Price & Availability of TN2410L

	To Download TN2410L Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .